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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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UF3SC120009K4S
UF3SC120009K4S
Favorite Products
UF3SC120009K4S
UF3SC120009K4S
UnitedSiC
SICFET N-CH 1200V 120A TO247-4
Transistors - FETs, MOSFETs - Single
DS_UF3SC120009K4S.pdf
9999
SICFET N-CH 1200V 120A TO247-4
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Product Status
Active
Mounting Type
Through Hole
Vgs(th) (Max) @ Id
6V @ 10mA
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Vgs (Max)
±20V
Series
-
FET Feature
-
Base Product Number
UF3SC120009
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Package / Case
TO-247-4
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-247-4
Mfr
UnitedSiC
Gate Charge (Qg) (Max) @ Vgs
234 nC @ 15 V
Package
Tube
Drive Voltage (Max Rds On, Min Rds On)
12V
Power Dissipation (Max)
789W (Tc)
Technology
SiCFET (Cascode SiCJFET)
Rds On (Max) @ Id, Vgs
11mOhm @ 100A, 12V
Input Capacitance (Ciss) (Max) @ Vds
8512 pF @ 100 V
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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