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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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TP65H050G4BS
TP65H050G4BS
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TP65H050G4BS
TP65H050G4BS
Transphorm
650 V 34 A GAN FET
Transistors - FETs, MOSFETs - Single
datasheet-tp65h050g4bs-650v-gan-fet
9999
650 V 34 A GAN FET
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Vgs(th) (Max) @ Id
4.8V @ 700µA
Power Dissipation (Max)
119W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mfr
Transphorm
Product Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Rds On (Max) @ Id, Vgs
60mOhm @ 22A, 10V
Series
SuperGaN®
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Mounting Type
Surface Mount
Package
Tube
Base Product Number
TP65H050
Supplier Device Package
TO-263
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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