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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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NVTFS4823NWFTWG
NVTFS4823NWFTWG
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NVTFS4823NWFTWG
NVTFS4823NWFTWG
onsemi
MOSFET N-CH 30V 13A 8WDFN
Transistors - FETs, MOSFETs - Single
nvtfs4823n-d.pdf
9999
MOSFET N-CH 30V 13A 8WDFN
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Product Status
Obsolete
Supplier Device Package
8-WDFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Vgs (Max)
±20V
Package
Tape & Reel (TR)
FET Feature
-
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
NVTFS4823
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Mfr
onsemi
Series
Automotive, AEC-Q101
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 12 V
Power Dissipation (Max)
3.1W (Ta), 21W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
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