Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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NTTFS4930NTAG
NTTFS4930NTAG
onsemi
MOSFET N-CH 30V 4.5A/23A 8WDFN
nttfs4930n-d.pdf
9999
MOSFET N-CH 30V 4.5A/23A 8WDFN
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
23mOhm @ 6A, 10V
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
476 pF @ 15 V
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
NTTFS4930
Mfr
onsemi
FET Type
N-Channel
Vgs(th) (Max) @ Id
2.2V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Supplier Device Package
8-WDFN (3.3x3.3)
Product Status
Obsolete
Power Dissipation (Max)
790mW (Ta), 20.2W (Tc)
Package / Case
8-PowerWDFN
Package
Tape & Reel (TR)^^Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta), 23A (Tc)
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30 V
FET Feature
-
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