Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. NTP8G206NG
NTP8G206NG
NTP8G206NG
Favorite Products
NTP8G206NG
NTP8G206NG
onsemi
GANFET N-CH 600V 17A TO220-3
NTP8G206N.pdf
9999
GANFET N-CH 600V 17A TO220-3
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
onsemi
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 480 V
Package
Tube
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Supplier Device Package
TO-220
FET Type
N-Channel
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
8V
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Technology
GaNFET (Gallium Nitride)
FET Feature
-
Series
-
Drain to Source Voltage (Vdss)
600 V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 8V
Vgs (Max)
±18V
Power Dissipation (Max)
96W (Tc)
Package / Case
TO-220-3
Base Product Number
NTP8G2
Vgs(th) (Max) @ Id
2.6V @ 500µA
lazy img
Quality Guarantee
Trusted global supply networks
lazy img
Competitive Pricing
Reducing your business costs
lazy img
Express Delivery
Reliable global express services
lazy img
Customer Support
Friendly 24/7 customer support
TOP
RFQ List ( 0 items)