sales1@ytxelec.com
+86 13302430104
0 item (s)
RFQ Inquiry

Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. NTP067N65S3H
NTP067N65S3H
NTP067N65S3H
Favorite Products
NTP067N65S3H
NTP067N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
Transistors - FETs, MOSFETs - Single
ntp067n65s3h-d.pdf
9999
POWER MOSFET, N-CHANNEL, SUPERFE
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
3750 pF @ 400 V
Vgs (Max)
±30V
Package / Case
TO-220-3
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
FET Type
N-Channel
Vgs(th) (Max) @ Id
4V @ 3.9mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Supplier Device Package
TO-220-3
Package
Tube
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 10V
FET Feature
-
Power Dissipation (Max)
266W (Tc)
Mounting Type
Through Hole
Series
SuperFET® III
Mfr
onsemi
Related Products
R6020KNZC17

Rohm Semiconductor
TMS70C02FNLR

Texas Instruments
SIRC10DP-T1-GE3

Vishay Siliconix
DMG4468LFG-7

Diodes Incorporated
IPN50R2K0CEATMA1

Infineon Technologies
APT50M75LFLLG

Microchip Technology
NVD3055L104T4G-VF01

onsemi
R8006KNXC7G

Rohm Semiconductor

lazy img
Quality Guarantee
Trusted global supply networks
lazy img
Competitive Pricing
Reducing your business costs
lazy img
Express Delivery
Reliable global express services
lazy img
Customer Support
Friendly 24/7 customer support
Support
Resources
Contact Us
Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
2 1 3

TOP
RFQ List ( 0 items)