Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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NTMFS4826NET1G
NTMFS4826NET1G
onsemi
MOSFET N-CH 30V 9.5A/66A 5DFN
NTMFS4826NE.pdf
9999
MOSFET N-CH 30V 9.5A/66A 5DFN
9999 In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
2.5V @ 250µA
Mfr
onsemi
FET Type
N-Channel
Series
-
Rds On (Max) @ Id, Vgs
5.9mOhm @ 30A, 10V
Vgs (Max)
±20V
Product Status
Obsolete
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 11.5V
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Current - Continuous Drain (Id) @ 25°C
9.5A (Ta), 66A (Tc)
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
NTMFS4
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 12 V
Power Dissipation (Max)
870mW (Ta), 41.7W (Tc)
Supplier Device Package
5-DFN (5x6) (8-SOFL)
FET Feature
-
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