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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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NTLJF3118NTAG
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NTLJF3118NTAG
NTLJF3118NTAG
onsemi
MOSFET N-CH 20V 2.6A 6WDFN
Transistors - FETs, MOSFETs - Single
ntljf3118n-d.pdf
9999
MOSFET N-CH 20V 2.6A 6WDFN
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
FET Feature
Schottky Diode (Isolated)
FET Type
N-Channel
Product Status
Obsolete
Vgs(th) (Max) @ Id
1V @ 250µA
Package
Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Gate Charge (Qg) (Max) @ Vgs
3.7 nC @ 4.5 V
Vgs (Max)
±12V
Supplier Device Package
6-WDFN (2x2)
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
271 pF @ 10 V
Mounting Type
Surface Mount
Base Product Number
NTLJF31
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Rds On (Max) @ Id, Vgs
65mOhm @ 3.8A, 4.5V
Mfr
onsemi
Power Dissipation (Max)
700mW (Ta)
Package / Case
6-WDFN Exposed Pad
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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