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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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NA03HSA08
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NA03HSA08
NA03HSA08
KYOCERA AVX
DIODE SCHOTTKY 80V 3A DO-221BC
Diodes - Rectifiers - Single
NA03HSA08-file.pdf
9999
DIODE SCHOTTKY 80V 3A DO-221BC
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Current - Average Rectified (Io)
3A
Voltage - DC Reverse (Vr) (Max)
80 V
Voltage - Forward (Vf) (Max) @ If
700 mV @ 3 A
Series
-
Package / Case
DO-221BC, SMA Flat Leads Exposed Pad
Capacitance @ Vr, F
-
Mfr
KYOCERA AVX
Package
Tape & Reel (TR)^^Cut Tape (CT)
Mounting Type
Surface Mount
Supplier Device Package
NA (DO-221BC)
Operating Temperature - Junction
-40°C ~ 150°C
Current - Reverse Leakage @ Vr
100 µA @ 80 V
Diode Type
Schottky
Product Status
Active
Speed
Fast Recovery =< 500ns, > 200mA (Io)
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