Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXTQ280N055T
IXTQ280N055T
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IXTQ280N055T
IXTQ280N055T
IXYS
MOSFET N-CH 55V 280A TO3P
9999
MOSFET N-CH 55V 280A TO3P
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Supplier Device Package
TO-3P
Rds On (Max) @ Id, Vgs
3.2mOhm @ 50A, 10V
Mfr
IXYS
Vgs(th) (Max) @ Id
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
9700 pF @ 25 V
Series
TrenchMV™
Package
Tube
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Power Dissipation (Max)
550W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
280A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-3P-3, SC-65-3
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
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