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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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  5. IXTP20N65X2
IXTP20N65X2
IXTP20N65X2
Favorite Products
IXTP20N65X2
IXTP20N65X2
IXYS
MOSFET N-CH 650V 20A TO220AB
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
a
9999
MOSFET N-CH 650V 20A TO220AB
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Series
Ultra X2
Package
Tube
Product Status
Active
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Mfr
IXYS
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 25 V
Base Product Number
IXTP20
Rds On (Max) @ Id, Vgs
185mOhm @ 10A, 10V
Mounting Type
Through Hole
Supplier Device Package
TO-220
Power Dissipation (Max)
290W (Tc)
Package / Case
TO-220-3
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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