Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXTP200N085T
IXTP200N085T
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IXTP200N085T
IXTP200N085T
IXYS
MOSFET N-CH 85V 200A TO220AB
9999
MOSFET N-CH 85V 200A TO220AB
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
5mOhm @ 25A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Mfr
IXYS
Package
Tube
Product Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
7600 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
85 V
Power Dissipation (Max)
480W (Tc)
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
FET Feature
-
Supplier Device Package
TO-220-3
Series
TrenchMV™
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-220-3
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Vgs (Max)
±20V
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