Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXTP18P10T
IXTP18P10T
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IXTP18P10T
IXTP18P10T
IXYS
MOSFET P-CH 100V 18A TO220AB
9999
MOSFET P-CH 100V 18A TO220AB
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Package
Tube
Supplier Device Package
TO-220-3
Vgs(th) (Max) @ Id
4.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V
Mounting Type
Through Hole
Series
TrenchP™
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
83W (Tc)
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Base Product Number
IXTP18
Mfr
IXYS
Rds On (Max) @ Id, Vgs
120mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±15V
FET Type
P-Channel
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