Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXKR47N60C5
IXKR47N60C5
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IXKR47N60C5
IXKR47N60C5
IXYS
MOSFET N-CH 600V 47A ISOPLUS247
9999
MOSFET N-CH 600V 47A ISOPLUS247
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Series
CoolMOS™
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
6800 pF @ 100 V
Product Status
Active
Supplier Device Package
ISOPLUS247™
Vgs (Max)
±20V
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXKR47
Mfr
IXYS
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
3.5V @ 3mA
FET Feature
Super Junction
Mounting Type
Through Hole
Package
Tube
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Rds On (Max) @ Id, Vgs
45mOhm @ 44A, 10V
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