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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFT60N65X2HV
IXFT60N65X2HV
Favorite Products
IXFT60N65X2HV
IXFT60N65X2HV
IXYS
MOSFET N-CH 650V 60A TO268HV
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft60n65x2hv_datasheet.pdf.pdf
9999
MOSFET N-CH 650V 60A TO268HV
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
FET Feature
-
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Mfr
IXYS
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 10 V
Series
HiPerFET™, Ultra X2
Package
Tube
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Surface Mount
Power Dissipation (Max)
780W (Tc)
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
6300 pF @ 25 V
Supplier Device Package
TO-268HV (IXFT)
Vgs(th) (Max) @ Id
5V @ 4mA
Base Product Number
IXFT60
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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