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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFT58N20Q TRL
IXFT58N20Q TRL
Favorite Products
IXFT58N20Q TRL
IXFT58N20Q TRL
IXYS
MOSFET N-CH 200V 58A TO268
Transistors - FETs, MOSFETs - Single
IXF(H,T)58N20Q.pdf
9999
MOSFET N-CH 200V 58A TO268
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
FET Feature
-
Mfr
IXYS
Power Dissipation (Max)
300W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 29A, 10V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Obsolete
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Series
HiPerFET™
Drain to Source Voltage (Vdss)
200 V
Vgs (Max)
±20V
Supplier Device Package
TO-268 (IXFT)
Vgs(th) (Max) @ Id
4V @ 4mA
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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