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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFT23N80Q
IXFT23N80Q
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IXFT23N80Q
IXFT23N80Q
IXYS
MOSFET N-CH 800V 23A TO268
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh23n80q_datasheet.pdf.pdf
9999
MOSFET N-CH 800V 23A TO268
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Vgs (Max)
±30V
Power Dissipation (Max)
500W (Tc)
Series
HiPerFET™, Q Class
Product Status
Active
Drain to Source Voltage (Vdss)
800 V
Mounting Type
Surface Mount
Base Product Number
IXFT23
Technology
MOSFET (Metal Oxide)
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mfr
IXYS
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
FET Feature
-
Rds On (Max) @ Id, Vgs
420mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4.5V @ 3mA
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Box
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 25 V
Supplier Device Package
TO-268AA
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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