Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFT18N90P
IXFT18N90P
IXFT18N90P
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IXFT18N90P
IXFT18N90P
IXYS
MOSFET N-CH 900V 18A TO268
9999
MOSFET N-CH 900V 18A TO268
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package
Tube
Vgs (Max)
±30V
Power Dissipation (Max)
540W (Tc)
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5230 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-268AA
FET Feature
-
Technology
MOSFET (Metal Oxide)
Mfr
IXYS
Series
HiPerFET™, Polar
Mounting Type
Surface Mount
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
IXFT18
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
600mOhm @ 500mA, 10V
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
6.5V @ 1mA
Drain to Source Voltage (Vdss)
900 V
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