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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFQ140N20X3
IXFQ140N20X3
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IXFQ140N20X3
IXFQ140N20X3
IXYS
MOSFET N-CH 200V 140A TO3P
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_140n20x3_datasheet.pdf.pdf
9999
MOSFET N-CH 200V 140A TO3P
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
9.6mOhm @ 70A, 10V
Input Capacitance (Ciss) (Max) @ Vds
7660 pF @ 25 V
Package / Case
TO-3P-3, SC-65-3
Mfr
IXYS
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
140A (Tc)
Vgs(th) (Max) @ Id
4.5V @ 4mA
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Product Status
Active
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
127 nC @ 10 V
Power Dissipation (Max)
520W (Tc)
Series
HiPerFET™, Ultra X3
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Base Product Number
IXFQ140
FET Feature
-
Supplier Device Package
TO-3P
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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