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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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  5. IXFQ12N80P
IXFQ12N80P
IXFQ12N80P
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IXFQ12N80P
IXFQ12N80P
IXYS
MOSFET N-CH 800V 12A TO3P
Transistors - FETs, MOSFETs - Single
IXF(H,Q)12N80P,%20IXFV12N80P,PS.pdf
9999
MOSFET N-CH 800V 12A TO3P
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Product Status
Active
Base Product Number
IXFQ12
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Package
Tube
Rds On (Max) @ Id, Vgs
850mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Power Dissipation (Max)
360W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Mfr
IXYS
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 25 V
FET Type
N-Channel
Package / Case
TO-3P-3, SC-65-3
Series
HiPerFET™, Polar
Vgs (Max)
±30V
FET Feature
-
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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