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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFP8N65X2
IXFP8N65X2
IXYS
MOSFET N-CH 650V 8A TO220
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n65x2_datasheet.pdf.pdf
a
9999
MOSFET N-CH 650V 8A TO220
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Mfr
IXYS
Package
Tube
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
450mOhm @ 4A, 10V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
Supplier Device Package
TO-220-3
Series
HiPerFET™, Ultra X2
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
5V @ 250µA
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±30V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Base Product Number
IXFP8N65
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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