Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFN50N120SK
IXFN50N120SK
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IXFN50N120SK
IXFN50N120SK
IXYS
SICFET N-CH 1200V 48A SOT227B
IXFN50N120SK.pdf
9999
SICFET N-CH 1200V 48A SOT227B
9999 In Stock
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Product Attributes
Type PARAMETERS
FET Type
N-Channel
Power Dissipation (Max)
-
Mfr
IXYS
Input Capacitance (Ciss) (Max) @ Vds
1895 pF @ 1000 V
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Series
-
Vgs(th) (Max) @ Id
2.8V @ 10mA
Vgs (Max)
+20V, -5V
Package
Tube
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Product Status
Active
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
20V
Package / Case
SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss)
1200 V
Rds On (Max) @ Id, Vgs
52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 20 V
FET Feature
-
Base Product Number
IXFN50
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