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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFN26N100P
IXFN26N100P
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IXFN26N100P
IXFN26N100P
IXYS
MOSFET N-CH 1000V 23A SOT-227B
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn26n100p_datasheet.pdf.pdf
9999
MOSFET N-CH 1000V 23A SOT-227B
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
1000 V
Mounting Type
Chassis Mount
Package
Tube
Rds On (Max) @ Id, Vgs
390mOhm @ 13A, 10V
Vgs (Max)
±30V
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
595W (Tc)
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN26
Supplier Device Package
SOT-227B
Series
HiPerFET™, Polar
Gate Charge (Qg) (Max) @ Vgs
197 nC @ 10 V
FET Type
N-Channel
Mfr
IXYS
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
6.5V @ 1mA
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
11900 pF @ 25 V
FET Feature
-
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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