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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFN102N30P
IXFN102N30P
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IXFN102N30P
IXFN102N30P
IXYS
MOSFET N-CH 300V 88A SOT227B
Transistors - FETs, MOSFETs - Single
IXFN102N30P.pdf
9999
MOSFET N-CH 300V 88A SOT227B
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
5V @ 4mA
Current - Continuous Drain (Id) @ 25°C
88A (Tc)
FET Type
N-Channel
Package / Case
SOT-227-4, miniBLOC
FET Feature
-
Power Dissipation (Max)
600W (Tc)
Drain to Source Voltage (Vdss)
300 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
SOT-227B
Mfr
IXYS
Product Status
Active
Series
HiPerFET™, Polar
Package
Box
Rds On (Max) @ Id, Vgs
33mOhm @ 500mA, 10V
Vgs (Max)
±20V
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
7500 pF @ 25 V
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
224 nC @ 10 V
Base Product Number
IXFN102
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