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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFK210N30X3
IXFK210N30X3
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IXFK210N30X3
IXFK210N30X3
IXYS
MOSFET N-CH 300V 210A TO264
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_210n30x3_datasheet.pdf.pdf
9999
MOSFET N-CH 300V 210A TO264
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Product Status
Active
Package / Case
TO-264-3, TO-264AA
Package
Tube
Drain to Source Voltage (Vdss)
300 V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4.5V @ 8mA
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-264
Base Product Number
IXFK210
Mfr
IXYS
Current - Continuous Drain (Id) @ 25°C
210A (Tc)
Gate Charge (Qg) (Max) @ Vgs
375 nC @ 10 V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
24200 pF @ 25 V
FET Feature
-
Rds On (Max) @ Id, Vgs
5.5mOhm @ 105A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
1250W (Tc)
Mounting Type
Through Hole
Series
HiPerFET™, Ultra X3
FET Type
N-Channel
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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