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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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  5. IXFH6N100
IXFH6N100
IXFH6N100
IXFH6N100
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IXFH6N100
IXFH6N100
IXYS
MOSFET N-CH 1000V 6A TO247AD
Transistors - FETs, MOSFETs - Single
IXFH6N100,%206N90,%20IXFM.pdf
9999
MOSFET N-CH 1000V 6A TO247AD
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Base Product Number
IXFH6
Series
HiPerFET™
Vgs(th) (Max) @ Id
4.5V @ 2.5mA
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Supplier Device Package
TO-247AD (IXFH)
Drain to Source Voltage (Vdss)
1000 V
Rds On (Max) @ Id, Vgs
2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Mfr
IXYS
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 25 V
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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