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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFH18N65X2
IXFH18N65X2
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IXFH18N65X2
IXFH18N65X2
IXYS
MOSFET N-CH 650V 18A TO247
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_18n65x2_datasheet.pdf.pdf
a
9999
MOSFET N-CH 650V 18A TO247
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Vgs (Max)
±30V
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Product Status
Active
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
FET Feature
-
Mfr
IXYS
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Supplier Device Package
TO-247 (IXTH)
Base Product Number
IXFH18
Drain to Source Voltage (Vdss)
650 V
Vgs(th) (Max) @ Id
5V @ 1.5mA
Rds On (Max) @ Id, Vgs
200mOhm @ 9A, 10V
Series
HiPerFET™, Ultra X2
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
1520 pF @ 25 V
Power Dissipation (Max)
290W (Tc)
FET Type
N-Channel
Package / Case
TO-247-3
Mounting Type
Through Hole
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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