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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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  5. IXFH150N20T
IXFH150N20T
IXFH150N20T
Favorite Products
IXFH150N20T
IXFH150N20T
IXYS
MOSFET N-CH 200V 150A TO247AD
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_150n20t_datasheet.pdf.pdf
9999
MOSFET N-CH 200V 150A TO247AD
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
177 nC @ 10 V
Mfr
IXYS
Supplier Device Package
TO-247AD (IXFH)
Current - Continuous Drain (Id) @ 25°C
150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
11700 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Series
HiPerFET™, Trench
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IXFH150
Vgs (Max)
±20V
Product Status
Active
Power Dissipation (Max)
890W (Tc)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
15mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Mounting Type
Through Hole
FET Feature
-
Package / Case
TO-247-3
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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