Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFH11N80
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IXFH11N80
IXFH11N80
IXYS
MOSFET N-CH 800V 11A TO247AD
9999
MOSFET N-CH 800V 11A TO247AD
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Power Dissipation (Max)
300W (Tc)
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-247AD (IXFH)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Mounting Type
Through Hole
Base Product Number
IXFH11
Series
HiPerFET™
Rds On (Max) @ Id, Vgs
950mOhm @ 500mA, 10V
Package
Tube
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-247-3
FET Type
N-Channel
Mfr
IXYS
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
800 V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 25 V
FET Feature
-
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