sales1@ytxelec.com
+86 13302430104
0 item (s)
RFQ Inquiry

Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IXFA6N120P
IXFA6N120P
IXFA6N120P
Favorite Products
IXFA6N120P
IXFA6N120P
IXYS
MOSFET N-CH 1200V 6A TO263
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf
9999
MOSFET N-CH 1200V 6A TO263
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
2830 pF @ 25 V
Mfr
IXYS
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±30V
Power Dissipation (Max)
250W (Tc)
Series
HiPerFET™, Polar
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.4Ohm @ 500mA, 10V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature
-
Supplier Device Package
TO-263 (IXFA)
Base Product Number
IXFA6N120
Product Status
Active
Drain to Source Voltage (Vdss)
1200 V
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
5V @ 1mA
Package
Tube
Related Products
NTMFS5C423NLT3G

onsemi
IPN65R1K5CE

Infineon Technologies
FDWS9510L-F085

onsemi
NTMFS5834NLT1G

onsemi
STL20NF06LAG

STMicroelectronics
TK5R3A06PL,S4X

Toshiba Semiconductor and Storage
AUIRF1404ZL

International Rectifier
IXTP18P10T

IXYS

lazy img
Quality Guarantee
Trusted global supply networks
lazy img
Competitive Pricing
Reducing your business costs
lazy img
Express Delivery
Reliable global express services
lazy img
Customer Support
Friendly 24/7 customer support
Support
Resources
Contact Us
Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
2 1 3

TOP
RFQ List ( 0 items)