Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFA4N85X
IXFA4N85X
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IXFA4N85X
IXFA4N85X
IXYS
MOSFET N-CH 850V 3.5A TO263
9999
MOSFET N-CH 850V 3.5A TO263
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Series
HiPerFET™, Ultra X
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Base Product Number
IXFA4N85
Mfr
IXYS
Drain to Source Voltage (Vdss)
850 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Package
Tube
Vgs(th) (Max) @ Id
5.5V @ 250µA
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-263 (IXFA)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
3.5A (Tc)
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
247 pF @ 25 V
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