Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IXFA130N10T2
IXFA130N10T2
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IXFA130N10T2
IXFA130N10T2
IXYS
MOSFET N-CH 100V 130A TO263
9999
MOSFET N-CH 100V 130A TO263
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id
4.5V @ 1mA
Vgs (Max)
±20V
FET Type
N-Channel
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
6600 pF @ 25 V
Mounting Type
Surface Mount
Mfr
IXYS
Power Dissipation (Max)
360W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tube
Supplier Device Package
TO-263 (IXFA)
Base Product Number
IXFA130
Series
HiPerFET™, TrenchT2™
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.1mOhm @ 65A, 10V
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