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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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Harris Corporation
MOSFET P-CH 100V 4A TO220AB
Transistors - FETs, MOSFETs - Single
HRISSD78-1.pdf?t.download=true&u=5oefqw
9999
MOSFET P-CH 100V 4A TO220AB
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2.4A, 10V
Power Dissipation (Max)
43W (Tc)
Mfr
Harris Corporation
Drain to Source Voltage (Vdss)
100 V
Package / Case
TO-220-3
FET Type
P-Channel
Mounting Type
Through Hole
Vgs (Max)
±20V
Supplier Device Package
TO-220AB
Package
Tube
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
Operating Temperature
-55°C ~ 175°C (TJ)
Series
-
Technology
MOSFET (Metal Oxide)
Product Status
Obsolete
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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