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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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IRF630S
IRF630S
Favorite Products
IRF630S
IRF630S
Vishay Siliconix
MOSFET N-CH 200V 9A D2PAK
Transistors - FETs, MOSFETs - Single
9999
MOSFET N-CH 200V 9A D2PAK
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Power Dissipation (Max)
3W (Ta), 74W (Tc)
Base Product Number
IRF630
Series
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Mfr
Vishay Siliconix
Drain to Source Voltage (Vdss)
200 V
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
400mOhm @ 5.4A, 10V
Supplier Device Package
D²PAK (TO-263)
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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