Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQU3N60TU
FQU3N60TU
MOSFET N-CH 600V 2.4A IPAK
9999
MOSFET N-CH 600V 2.4A IPAK
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Mfr
Fairchild Semiconductor
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Series
QFET®
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
I-PAK
FET Type
N-Channel
Vgs (Max)
±30V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
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