Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQPF9P25
FQPF9P25
onsemi
MOSFET P-CH 250V 6A TO220F-3
fqpf9p25-d.pdf
9999
MOSFET P-CH 250V 6A TO220F-3
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package
Tube
FET Feature
-
Product Status
Active
Rds On (Max) @ Id, Vgs
620mOhm @ 3A, 10V
Mounting Type
Through Hole
Mfr
onsemi
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Base Product Number
FQPF9
Series
QFET®
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Drain to Source Voltage (Vdss)
250 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 25 V
Power Dissipation (Max)
50W (Tc)
FET Type
P-Channel
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