Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQPF4N25
FQPF4N25
onsemi
MOSFET N-CH 250V 2.8A TO220F
FQPF4N25.pdf
9999
MOSFET N-CH 250V 2.8A TO220F
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
FQPF4
Package / Case
TO-220-3 Full Pack
Mfr
onsemi
Drain to Source Voltage (Vdss)
250 V
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 10 V
Mounting Type
Through Hole
Series
QFET®
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Supplier Device Package
TO-220F-3
Power Dissipation (Max)
32W (Tc)
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Rds On (Max) @ Id, Vgs
1.75Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
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