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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQPF1P50
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FQPF1P50
FQPF1P50
onsemi
MOSFET P-CH 500V 1.03A TO220F
Transistors - FETs, MOSFETs - Single
FQPF1P50.pdf
9999
MOSFET P-CH 500V 1.03A TO220F
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Product Status
Obsolete
Package
Tube
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-220F-3
Base Product Number
FQPF1
Current - Continuous Drain (Id) @ 25°C
1.03A (Tc)
Package / Case
TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
Power Dissipation (Max)
28W (Tc)
Series
QFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
10.5Ohm @ 515mA, 10V
Mfr
onsemi
Drain to Source Voltage (Vdss)
500 V
FET Feature
-
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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