Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQP8P10
FQP8P10
POWER FIELD-EFFECT TRANSISTOR, 8
9999
POWER FIELD-EFFECT TRANSISTOR, 8
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Series
QFET®
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Active
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Mfr
Fairchild Semiconductor
Supplier Device Package
TO-220-3
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Package / Case
TO-220-3
Package
Bulk
Rds On (Max) @ Id, Vgs
530mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
Power Dissipation (Max)
65W (Tc)
FET Feature
-
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