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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQP8N80C
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FQP8N80C
FQP8N80C
onsemi
MOSFET N-CH 800V 8A TO220-3
Transistors - FETs, MOSFETs - Single
FAIRS46449-1.pdf?t.download=true&u=5oefqw
TO220B03_Pkg_Dwg.pdf
9999
MOSFET N-CH 800V 8A TO220-3
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Product Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
1.55Ohm @ 4A, 10V
Mfr
onsemi
Series
QFET®
Vgs (Max)
±30V
FET Feature
-
Mounting Type
Through Hole
Base Product Number
FQP8
Package
Tube
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Drain to Source Voltage (Vdss)
800 V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Power Dissipation (Max)
178W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 25 V
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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