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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQP47P06
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FQP47P06
FQP47P06
onsemi
MOSFET P-CH 60V 47A TO220-3
Transistors - FETs, MOSFETs - Single
fqp47p06-d.pdf
TO220B03_Pkg_Dwg.pdf
9999
MOSFET P-CH 60V 47A TO220-3
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package
Tube
Vgs (Max)
±25V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Supplier Device Package
TO-220-3
Rds On (Max) @ Id, Vgs
26mOhm @ 23.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Product Status
Active
Power Dissipation (Max)
160W (Tc)
Base Product Number
FQP47
Mfr
onsemi
Series
QFET®
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
P-Channel
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-220-3
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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