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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQI12N60CTU
FQI12N60CTU
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FQI12N60CTU
FQI12N60CTU
onsemi
MOSFET N-CH 600V 12A I2PAK
Transistors - FETs, MOSFETs - Single
FQB12N60C.pdf
9999
MOSFET N-CH 600V 12A I2PAK
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 25 V
Mounting Type
Through Hole
Series
QFET®
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Power Dissipation (Max)
3.13W (Ta), 225W (Tc)
Base Product Number
FQI1
Mfr
onsemi
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Obsolete
Package
Tube
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Rds On (Max) @ Id, Vgs
650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Supplier Device Package
I2PAK (TO-262)
Technology
MOSFET (Metal Oxide)
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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