Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQD20N06LETM
FQD20N06LETM
onsemi
MOSFET N-CH 60V 17.2A DPAK
9999
MOSFET N-CH 60V 17.2A DPAK
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status
Obsolete
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
665 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package
Tape & Reel (TR)
FET Type
N-Channel
Power Dissipation (Max)
2.5W (Ta), 38W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Current - Continuous Drain (Id) @ 25°C
17.2A (Tc)
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Base Product Number
FQD2
Drain to Source Voltage (Vdss)
60 V
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Vgs (Max)
±20V
Mfr
onsemi
Series
QFET®
Rds On (Max) @ Id, Vgs
60mOhm @ 8.6A, 10V
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