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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FQB24N08TM
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FQB24N08TM
FQB24N08TM
onsemi
MOSFET N-CH 80V 24A D2PAK
Transistors - FETs, MOSFETs - Single
FQB24N08.pdf
9999
MOSFET N-CH 80V 24A D2PAK
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
60mOhm @ 12A, 10V
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
FQB2
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 25 V
Supplier Device Package
D²PAK (TO-263)
Series
QFET®
Drain to Source Voltage (Vdss)
80 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±25V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id
4V @ 250µA
Package
Tape & Reel (TR)
FET Type
N-Channel
Power Dissipation (Max)
3.75W (Ta), 75W (Tc)
Technology
MOSFET (Metal Oxide)
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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