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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FDZ206P
FDZ206P
Fairchild Semiconductor
MOSFET P-CH 20V 13A 30BGA
Transistors - FETs, MOSFETs - Single
FAIRS24002-1.pdf?t.download=true&u=5oefqw
9999
MOSFET P-CH 20V 13A 30BGA
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Mfr
Fairchild Semiconductor
Package / Case
30-WFBGA
Input Capacitance (Ciss) (Max) @ Vds
4280 pF @ 10 V
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Series
PowerTrench®
Vgs(th) (Max) @ Id
1.5V @ 250µA
Supplier Device Package
30-BGA (4x3.5)
FET Type
P-Channel
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Rds On (Max) @ Id, Vgs
9.5mOhm @ 13A, 4.5V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Package
Bulk
Product Status
Obsolete
Vgs (Max)
±12V
Power Dissipation (Max)
2.2W (Ta)
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 4.5 V
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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