Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FDS6612A
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FDS6612A
FDS6612A
onsemi
MOSFET N-CH 30V 8.4A 8SOIC
fds6612a-d.pdf
9999
MOSFET N-CH 30V 8.4A 8SOIC
9999 In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
8.4A (Ta)
Mfr
onsemi
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Active
Rds On (Max) @ Id, Vgs
22mOhm @ 8.4A, 10V
Mounting Type
Surface Mount
Package
Tape & Reel (TR)^^Cut Tape (CT)
Supplier Device Package
8-SOIC
Gate Charge (Qg) (Max) @ Vgs
7.6 nC @ 5 V
Base Product Number
FDS6612
Vgs (Max)
±20V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Series
PowerTrench®
Vgs(th) (Max) @ Id
3V @ 250µA
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V
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