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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FDD390N15A
FDD390N15A
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FDD390N15A
FDD390N15A
onsemi
MOSFET N-CH 150V 26A DPAK
Transistors - FETs, MOSFETs - Single
fdd390n15a-d.pdf
9999
MOSFET N-CH 150V 26A DPAK
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 26A, 10V
Supplier Device Package
TO-252AA
Package
Tape & Reel (TR)^^Cut Tape (CT)
Base Product Number
FDD390
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
onsemi
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Gate Charge (Qg) (Max) @ Vgs
18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1285 pF @ 75 V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Series
PowerTrench®
Technology
MOSFET (Metal Oxide)
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Product Status
Active
FET Type
N-Channel
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
150 V
Mounting Type
Surface Mount
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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