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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FDBL86366-F085
FDBL86366-F085
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FDBL86366-F085
FDBL86366-F085
onsemi
MOSFET N-CH 80V 220A 8HPSOF
Transistors - FETs, MOSFETs - Single
design-resources?notFound=FDBL86366-F085-D.pdf
9999
MOSFET N-CH 80V 220A 8HPSOF
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
FET Feature
-
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Package / Case
8-PowerSFN
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
8-HPSOF
Base Product Number
FDBL86366
Power Dissipation (Max)
300W (Tj)
Series
Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs
3mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs
112 nC @ 10 V
Mfr
onsemi
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
220A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
6320 pF @ 40 V
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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