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Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FCH20N60
FCH20N60
onsemi
MOSFET N-CH 600V 20A TO247-3
Transistors - FETs, MOSFETs - Single
FCH20N60,%20FCA20N60(_F109).pdf
9999
MOSFET N-CH 600V 20A TO247-3
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Series
SuperFET™
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
208W (Tc)
Supplier Device Package
TO-247-3
Input Capacitance (Ciss) (Max) @ Vds
3080 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Base Product Number
FCH20
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Package
Tube
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600 V
Rds On (Max) @ Id, Vgs
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
98 nC @ 10 V
FET Feature
-
Package / Case
TO-247-3
Mfr
onsemi
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Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
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