Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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FCD5N60TM
FCD5N60TM
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
9999
POWER MOSFET, N-CHANNEL, SUPERFE
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Power Dissipation (Max)
54W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600 V
Vgs(th) (Max) @ Id
5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-252AA
Mfr
onsemi
Technology
MOSFET (Metal Oxide)
FET Feature
-
Package
Bulk
Series
SuperFET™
Product Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
950mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
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